Author:

Keywords:

Microwave device modeling, nonlinear device modeling, nonlinear measurements, Science & Technology, Technology, Engineering, Electrical & Electronic, Engineering, 0205 Optical Physics, 0906 Electrical and Electronic Engineering, 1005 Communications Technologies, Networking & Telecommunications, 4006 Communications engineering

Abstract:

In this letter we extract the parameters of the charge equations of a microwave transistor nonlinear model which is available in commercial CAD tools. In particular, the charge model parameters are extracted starting from small- and large-signal measurements. A better accuracy can be achieved when using large-signal measurements since the model parameters are obtained from experimental data which better reproduce the actual operating condition of the device under test. An advanced 0.15×300 μm2 pHEMT in GaAs technology, aimed at cold-FET mixer design, is considered as case study. © 2001-2012 IEEE.