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Title: Electrical properties of magnesium oxide layers with different surface pretreatment on high mobility Ge1-xSnx and Ge MOS capacitors
Authors: Su, Chen-Yi ×
Lieten, Ruben
Bakalov, Petar
Tseng, Wei-Jhih
Dillemans, Leander
Menghini, Mariela Andrea
Smets, Tomas
Seo, Jin Won
Locquet, Jean-Pierre #
Issue Date: 2014
Publisher: ELSEVIER SCIENCE BV
Series Title: APPLIED SURFACE SCIENCE vol:291 pages:31-34
Abstract: Germanium based channels are interesting for high performance CMOS devices because of their high carrier mobility. In this study, the electrical properties of MgO on both GeSn and Ge MOS capacitors have been investigated. The low equivalent oxide thickness (EOT) of 2.1 nm for MgO on GeSn with a Ge cap layer indicates the high potential for MOSFET applications. A surface treatment prior to oxide deposition is found essential to reduce the gate leakage. It is shown that HCl and H2O2 dipping followed by ozone treatment improves the leakage and leads to good capacitance–voltage (C–V) behavior.
URI: 
ISSN: 0169-4332
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Solid State Physics and Magnetism Section
Semiconductor Physics Section
Surface and Interface Engineered Materials
× corresponding author
# (joint) last author

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