PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE vol:211 issue:2 pages:440-443
Accurate modeling is essential for the development of electronic devices. While there are many theoretical approaches based on band theory and the effective mass approximation which are capable of simulating the operation of conventional semiconductor devices, these methods cannot be applied to devices based on strongly correlated electron materials because band theory fails to capture strongly correlated physics. Here
the electric potential across a metal–insulator-correlated oxide structure with a strongly correlated oxide layer is computed by numerical integration of the Poisson equation as the oxide approaches a metal-to-insulator transition (MIT). DMFT is used to calculate the charge density as a function of potential in the strongly correlated oxide layer. C–V curves are produced on the basis of the charge density data.