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Title: Co-W nanocrystalline electrodeposits as barrier for interconnects
Authors: Tsyntsaru, N. ×
Kaziukaitis, G.
Yang, C.
Cesiulis, H.
Philipsen, H. G. G.
Lelis, M.
Celis, Jean-Pierre #
Issue Date: 2014
Series Title: Journal of Solid State Electrochemistry vol:x issue:x pages:1-8
Abstract: This study was performed in order to investigate a possibility to obtain Co-W microbumps via electrochemical
routes, because this alloy recently has gained attraction as a novel barrier against copper diffusion. In order to be applied in flip-chip technology, barrier layers should be void-free and uniformly deposited on the entire area of a die to ensure high reliability and high performance of wafer bump-solder interface. To meet these requirements, a set of potentiostatic and galvanostatic electrodeposition was carried out from a citrate electrolyte, at pH 5 and at room temperature. The tests done confirm that void-free Co-W bumps with a uniform tungsten content along the bump can be obtained by potentiostatic and galvanostatic electrodeposition. Successful electrodeposition
of Cu/Co-W/Sn layers with good adhesion between them and
uniformity on the entire array of bumps also was obtained.
The XPS data confirm that electrodeposited Co-W layers can
act as a good barrier between Sn and Cu.
Description: Published online: 11 May 2014
ISSN: 1432-8488
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Department of Materials Engineering - miscellaneous
Surface and Interface Engineered Materials
× corresponding author
# (joint) last author

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