Nuclear Instruments & Methods in Physics Research A vol:728 pages:11-22
Geant4 simulations play a crucial role in the analysis and interpretation of experiments providing
low energy precision tests of the Standard Model. This paper focuses on the accuracy of the
description of the electron processes in the energy range between 100 and 1000 keV. The effect of
the different simulation parameters and multiple scattering models on the backscattering coefficients
is investigated. Simulations of the response of HPGe and passivated implanted planar Si detectors
to beta particles are compared to experimental results. An overall good agreement is found between
Geant4 simulations and experimental data.