Title: Interfacial Structure and Chemistry of GaN on Ge(111)
Authors: Zhang, Siyuan ×
Zhang, Yucheng
Cui, Ying
Freysoldt, Christoph
Neugebauer, Joerg
Lieten, Ruben R
Barnard, Jonathan S
Humphreys, Colin J #
Issue Date: 2013
Publisher: American Physical Society
Series Title: Physical Review Letters vol:111 issue:25 pages:256101-4
Abstract: The interface of GaN grown on Ge(111) by plasma-assisted molecular beam epitaxy is resolved by aberration corrected scanning transmission electron microscopy. A novel interfacial structure with a 5:4 closely spaced atomic bilayer is observed that explains why the interface is flat, crystalline, and free of GeNx. Density functional theory based total energy calculations show that the interface bilayer contains Ge and Ga atoms, with no N atoms. The 5:4 bilayer at the interface has a lower energy than a direct stacking of GaN on Ge(111) and enables the 5:4 lattice-matching growth of GaN.
ISSN: 0031-9007
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Solid State Physics and Magnetism Section
× corresponding author
# (joint) last author

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