Title: Selective area growth of InP in shallow trench isolation (STI) on large scale Si(001) wafer using defect confinement technique
Authors: Merckling, C ×
Waldron, Niamh
Jiang, Sijia
Guo, W
Richard, O
Douhard, B
Moussa, A
Vanhaeren, D
Bender, H
Collaert, N
Heyns, Marc
Thean, A
Caymax, M
Vandervorst, Wilfried #
Issue Date: 2013
Publisher: American Institute of Physics
Series Title: Journal of Applied Physics vol:114 issue:3 pages:33708-1-33708-9
Article number: x
ISSN: 0021-8979
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Surface and Interface Engineered Materials
Department of Materials Engineering - miscellaneous
Nuclear and Radiation Physics Section
× corresponding author
# (joint) last author

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