|ITEM METADATA RECORD
|Title: ||AlGaN/GaN field effect transistors for power electronics—Effect of finite GaN layer thickness on thermal characteristics|
|Authors: ||Hodges, Chris|
Anaya Calvo, J
|Issue Date: ||2013 |
|Publisher: ||American Institute of Physics|
|Series Title: ||Applied Physics Letters vol:103 issue:20 pages:202108|
|Publication status: ||published|
|KU Leuven publication type: ||IT|
|Appears in Collections:||Non-KU Leuven Association publications|
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