Author:

Keywords:

Science & Technology, Technology, Physical Sciences, Engineering, Electrical & Electronic, Nanoscience & Nanotechnology, Optics, Physics, Applied, Engineering, Science & Technology - Other Topics, Physics, Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET), Random Telegraph Noise (RTN), Trapping, Gate current, TEMPERATURE, MODEL, 0204 Condensed Matter Physics, 0299 Other Physical Sciences, 0906 Electrical and Electronic Engineering, Applied Physics, 4009 Electronics, sensors and digital hardware, 4016 Materials engineering

Abstract:

The properties of Random Telegraph Noise (RTN) in the gate current of nanoscaled Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFET) are discussed. While the gate current RTN capture and emission times depend strongly on temperature and gate voltage, the RTN amplitude, corresponding to single gate oxide leakage path, appears independent of temperature and scaling with the gate current. The RTN amplitude is observed to reach up to tens of percent of gate current. In carrier separation measurements the fluctuations typically appear in one component only. A correlation of drain and gate current fluctuations allows linking the charge and conduction states of a single gate oxide trap. A model for drain current RTN involving a metastable state is extended to include conduction through the single trap and gate current RTN. © 2013 Elsevier Ltd. All rights reserved.