Title: Improved NBTI reliability with sub 1-nanometer EOT ZrO2 compared to HfO2 gate dielectric
Authors: Cho, Moon Ju ×
Kaczer, Ben
Kauerauf, Thomas
Ragnarsson, Lars-Ake
Groeseneken, Guido #
Issue Date: 2013
Publisher: Institute of Electrical and Electronics Engineers
Series Title: IEEE Electron Device Letters vol:34 issue:5 pages:593-595
ISSN: 0741-3106
Publication status: published
KU Leuven publication type: IT
Appears in Collections:ESAT - MICAS, Microelectronics and Sensors
× corresponding author
# (joint) last author

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