|ITEM METADATA RECORD
|Title: ||Increased radiation hardness of short-channel electron-irradiated Si1-xGex source/drain p-type metal oxide semiconductor field-effect transistors at higher Ge content|
|Authors: ||Nakashima, Toshiyuki|
Gonzalez, Mireia B
|Issue Date: ||2013 |
|Publisher: ||Publication Board, Japanese Journal of Applied Physics|
|Series Title: ||Japanese Journal of Applied Physics 1, Regular Papers, Short Notes & Review Papers vol:52 issue:9 pages:94201|
|Publication status: ||published|
|KU Leuven publication type: ||IT|
|Appears in Collections:||Associated Section of ESAT - INSYS, Integrated Systems|
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