Title: Increased radiation hardness of short-channel electron-irradiated Si1-xGex source/drain p-type metal oxide semiconductor field-effect transistors at higher Ge content
Authors: Nakashima, Toshiyuki
Yoneoka, Masashi
Tsunoda, Isao
Takakura, Kenichiro
Gonzalez, Mireia B
Simoen, Eddy
Claeys, Cor
Yoshino, Kenji
Issue Date: 2013
Publisher: Publication Board, Japanese Journal of Applied Physics
Series Title: Japanese Journal of Applied Physics 1, Regular Papers, Short Notes & Review Papers vol:52 issue:9 pages:94201
ISSN: 0021-4922
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Associated Section of ESAT - INSYS, Integrated Systems

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