ITEM METADATA RECORD
Title: On the bipolar resistive switching memory using TiN/Hf/HfO2/Si MIS structure
Authors: Wu, Yung-Hsien
Wouters, Dirk
Hendrickx, Paul
Zhang, Leqi
Chen, Yang Yin
Goux, Ludovic
Fantini, Andrea
Groeseneken, Guido
Jurczak, Malgorzata
Issue Date: 2013
Publisher: Institute of Electrical and Electronics Engineers
Series Title: IEEE Electron Device Letters vol:34 issue:3 pages:414-416
ISSN: 0741-3106
Publication status: published
KU Leuven publication type: IT
Appears in Collections:ESAT - MICAS, Microelectronics and Sensors
Electrical Engineering - miscellaneous

Files in This Item:

There are no files associated with this item.

Request a copy

 




All items in Lirias are protected by copyright, with all rights reserved.

© Web of science