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Title: Novel back-channel-etch process flow based a-IGZO TFTs for circuit and display applications on PEN- foil
Authors: Nag, Manoj ×
Rockele, Maarten
Steudel, Soeren
Vaisman Chasin, Adrian
Myny, Kris
Bhoolokam, Ajay
Willegems, Myriam
Smout, Steve
Vicca, Peter
Ameys, Marc
Ke, Tung Huei
Schols, Sarah
Genoe, Jan
Groeseneken, Guido
Heremans, Paul #
Issue Date: 1-Sep-2013
Publisher: Society for Information Display
Series Title: Journal of the Society for Information Display vol:21 issue:9 pages:369-375
Abstract: In this study, we report high-quality amorphous indium–gallium–zinc-oxide (a-IGZO) thin-film transistors (TFTs) fabricated on a polyethylene naphthalate foil using a new back-channel-etch (BCE) process flow. The BCE flow allows a better scalability of TFTs for high-resolution backplanes and related circuits. The maximum processing temperature was limited to less than 165 °C in order to ensure good overlay accuracy (<1 µm) on foil. The presented process flow differs from the previously reported flow as we define the Mo source and drain contacts by dry etch prior to a-IGZO patterning. The TFTs show good electrical performance, including field-effect mobilities in the range of 15.0 cm2/(V·s), subthreshold slopes of 0.3 V/decade, and off-currents <1.0 pA on foil. The threshold voltage shifts of the TFTs measured were less than 1.0 V after a stressing time of 104 s in both positive (+1.0 MV/cm) and negative (−1.0 MV/cm) bias directions. The applicability of this new BCE process flow is demonstrated in a 19-stage ring oscillator, demonstrated to operate at a supply voltage of 10 V with a stage delay time of 1.35 µs, and in a TFT backplane driving a 32 × 32 active-matrix organic light-emitting diode display.
URI: 
ISSN: 1071-0922
Publication status: published
KU Leuven publication type: IT
Appears in Collections:ESAT - MICAS, Microelectronics and Sensors
Electrical Engineering (ESAT) TC, Technology Campus Diepenbeek
× corresponding author
# (joint) last author

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