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Title: Electron band alignment at Ge/oxide and AIIIBV/oxide interfaces from internal photoemission experiments
Authors: Afanas'ev, Valeri
Chou, Hsing-Yi
Houssa, Michel
Stesmans, Andre
Issue Date: 30-Oct-2013
Publisher: The Electrochemical Society, Inc.
Host Document: Semiconductors, Insulators, and Metals for Nanoelectronics 11 vol:58 issue:7 pages:311-316
Series Title: ECS Transactions
Conference: ECS Fall Meeting location:San-Francisco, USA date:27-31 October 2013
Abstract: Application of internal photoemission spectroscopy for determination of energy barriers and band offsets at interfaces of semiconductor crystals with deposited oxide insulators is overviewed. Systematic analysis of the results allows one to reveal several general trends in the evolution of the interface band alignment including the common anion rule and the band offset transitivity rule, which enables evaluation of the band offsets on the basis of the semiconductor and insulator bandgap width values.
ISSN: 1938-5862
Publication status: published
KU Leuven publication type: IC
Appears in Collections:Semiconductor Physics Section

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