Title: Thermally induced degradation of condensation-grown (100)Ge0.75Si0.25/SiO2 interfaces revealed by electron spin resonance
Authors: Kepa, Jacek ×
Stesmans, Andre
Afanas'ev, Valeri #
Issue Date: 25-Mar-2013
Publisher: American Institute of Physics
Series Title: Applied Physics Letters vol:102 issue:12 pages:122104-1-122104-4
Article number: 122104
Abstract: The thermal stability under isochronal annealing of the GeSi/SiO2 interfaces in the condensation grown silicon-germanium-on-insulator (100)Si/SiO2/Ge0.75S0.25/SiO2 structure has been assessed by electron spin resonance in terms of occurring interface defects. As to annealing in vacuum, this reveals thermal post-growth interface degradation, from ~440 °C onward, on atomic scale as substantial generation of Ge dangling bond (GePb1) interface defects, previously identified as detrimental electron traps. A similar behavior is observed for annealing in H2 (~1 atm), except that the interface degradation evolves more gradually. The data bear out that the temperature of technological H2 passivation treatments should not exceed ~440 °C.
ISSN: 0003-6951
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Semiconductor Physics Section
× corresponding author
# (joint) last author

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