Title: High-resolution electron spin resonance analysis of ion bombardment induced defects in advanced low-kappa insulators (kappa=2.0-2.5)
Authors: Afanas'ev, Valeri ×
Nguyen, A. P. D
Houssa, Michel
Stesmans, Andre
Tokei, Zs
Baklanov, M. R #
Issue Date: 29-Apr-2013
Publisher: American Institute of Physics
Series Title: Applied Physics Letters vol:102 issue:17 pages:172908-1-172908-5
Article number: 172908
Abstract: Electron spin resonance analysis of defects generated by ion bombardment in different lowpermittivity
(low-k) SiO2-based insulating films reveals common types of encountered defects: The
EX center (g about 2.0025) and a broad line centered at g about 2.0028 tentatively associated with dangling
bonds of carbon atoms backbonded to C or Si atoms. The efficiency of defect generation varies,
depending on the type of bombarding ions and the technology of insulator synthesis. However, the
two identified defects are observed in all studied cases, suggesting that these defects correspond to
the most stable atomic configurations resulting from the network damage of the low-k materials.
ISSN: 0003-6951
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Semiconductor Physics Section
× corresponding author
# (joint) last author

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