Title: Scaled X-bar TiN/HfO2/TiN RRAM cells processed with optimized plasma enhanced atomic layer deposition (PEALD) for TiN electrode
Authors: Chen, Y. Y ×
Goux, L
Pantisano, L
Swerts, Johan
Adelmann, C
Mertens, S
Afanas'ev, Valeri
Wang, X
Govoreanu, B
Degraeve, R
Kubicek, S
Paraschiv, V
Verbrugge, B
Jossart, N
Altimime, L
Jurczak, M
Kittl, Jo
Groeseneken, Guido
Wouters, Dirk #
Issue Date: Dec-2013
Publisher: North-Holland
Series Title: Microelectronic Engineering vol:112 pages:92-96
ISSN: 0167-9317
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Semiconductor Physics Section
Electrical Engineering - miscellaneous
× corresponding author
# (joint) last author

Files in This Item:

There are no files associated with this item.

Request a copy


All items in Lirias are protected by copyright, with all rights reserved.

© Web of science