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Title: Ultra-Low Copper Baths for Sub-35 nm Copper Interconnects
Authors: Atanasova, Tanya ×
Carbonell, Laure
Caluwaerts, Rudy
Tokei, Zsolt
Strubbe, Katrien
Vereecken, Philippe #
Issue Date: 2013
Publisher: Electrochemical Society
Series Title: Journal of the Electrochemical Society vol:160 issue:12 pages:D3255-D3259
Abstract: The copper interconnect technology is constrained by the non-uniformity of the current distribution over the wafer due to the terminal effect for resistive thin seeds. As a result, the current in the wafer center becomes insufficient to cathodically protect the copper seed leading to seed corrosion in this wafer area. To improve the current distribution, the exchange current density can be lowered e.g. by lowering the Cu2+ concentration. Our approach is to investigate and develop acid ultra-low copper baths with feature fill capability. For this goal, the optimum additives concentrations were sought and fill studies in 30 nm wide trenches were performed. Additionally, a low-copper/high-acid chemistry, that is also compatible with direct plating, was developed to enable the in-situ copper seed formation and filling in one process step for plating on non-copper seeds.
ISSN: 0013-4651
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Centre for Surface Chemistry and Catalysis
Supporting Services Campusmanagement Science, Engineering and Technology
× corresponding author
# (joint) last author

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