Journal of the Electrochemical Society vol:160 issue:12 pages:D3051-D3056
A model for copper electroplating of through-silicon vias (TSV) is proposed based on the suppressor adsorption/desorption mechanism, with special emphasis on the bottom-up filling of these structures. The proposed model is applicable for both 2-component (suppressor and accelerator) and 1-component (suppressor only) Cu plating chemistries. Numerical simulation was performed for the filling of 5 μm (diameter) × 40 μm (depth) vias. Simulated Cu profiles and the corresponding dependencies on additive concentration are confronted with existing experimental results.