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Title: Modeling the Bottom-Up Filling of Through-Silicon vias Through Suppressor Adsorption/Desorption Mechanism
Authors: Radisic, Aleksandar
Deconinck, Johan
Vereecken, Philippe # ×
Issue Date: 2013
Publisher: Electrochemical Society
Series Title: Journal of the Electrochemical Society vol:160 issue:12 pages:D3051-D3056
Abstract: A model for copper electroplating of through-silicon vias (TSV) is proposed based on the suppressor adsorption/desorption mechanism, with special emphasis on the bottom-up filling of these structures. The proposed model is applicable for both 2-component (suppressor and accelerator) and 1-component (suppressor only) Cu plating chemistries. Numerical simulation was performed for the filling of 5 μm (diameter) × 40 μm (depth) vias. Simulated Cu profiles and the corresponding dependencies on additive concentration are confronted with existing experimental results.
ISSN: 0013-4651
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Centre for Surface Chemistry and Catalysis
× corresponding author
# (joint) last author

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