ITEM METADATA RECORD
Title: Wafer-scale Cu plating uniformity on thin Cu seed layers
Authors: Yang, Liu ×
Atanasova, Tanya
Radisic, Aleksandar
Deconinck, Johan
West, Alan C
Vereecken, Philippe #
Issue Date: 2013
Publisher: Elsevier
Series Title: Electrochimica Acta vol:104 pages:242-248
Abstract: The wafer scale plating uniformity with thin Cu seed layer was studied. Plating experiments were performed
on 300 mm diameter wafers with 4 nm, 5 nm and 10 nm thin Cu seed layers. The plating current
distribution can be very nonuniform due to the high substrate resistance. In the case of extremely thin
seed layer, the corrosion of Cu due to dissolved oxygen becomes significant. It may lead to exposed barrier
layer near the wafer center. A modeling methodology was developed to study the Cu plating uniformity
on the wafer scale. Simulation result matches well with experimental measurement and theoretical prediction.
The plating uniformity and seed layer corrosion were studied for various seed layer thicknesses
using the proposed modeling approach.
ISSN: 0013-4686
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Centre for Surface Chemistry and Catalysis
× corresponding author
# (joint) last author

Files in This Item:

There are no files associated with this item.

Request a copy

 




All items in Lirias are protected by copyright, with all rights reserved.

© Web of science