Author:

Keywords:

Science & Technology, Technology, Physical Sciences, Engineering, Electrical & Electronic, Physics, Applied, Engineering, Physics, Amorphous indium-gallium-zinc-oxide (a-IGZO), amorphous oxide semiconductor (AOS), doping, radio-frequency, Schottky diode, 0906 Electrical and Electronic Engineering, Applied Physics, 4009 Electronics, sensors and digital hardware

Abstract:

IGZO film, which we fully measure and characterize, and how that affects the performance and optimization of the diodes. We measure our diodes in rectifiers, which operate up to 1.1 GHz. Finally, we show that these rectifiers can be fully modeled in SPICE using diode parameters extracted from electrical measurements.