Title: Influence of InGaP and AlGaAs Schottky layers on ESD robustness in GaAs pHEMTs
Authors: Chen, Shih-Hung
Lin, Yueh-Chin
Linten, Dimitri
Scholz, Mirko
Hellings, Geert
Chang, Edward Yi
Groeseneken, Guido
Issue Date: 2012
Publisher: Institute of Electrical and Electronics Engineers
Series Title: IEEE Electron Device Letters vol:33 issue:9 pages:1252-1254
ISSN: 0741-3106
Publication status: published
KU Leuven publication type: IT
Appears in Collections:ESAT - MICAS, Microelectronics and Sensors

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