|ITEM METADATA RECORD
|Title: ||GIDL behavior of p- and n-MuGFET devices with different TiN metal gate thickness and high-k gate dielectrics|
|Authors: ||Galeti, M|
|Issue Date: ||2012 |
|Publisher: ||Pergamon Press|
|Series Title: ||Solid-State Electronics vol:70 issue:1 pages:44-49|
|Publication status: ||published|
|KU Leuven publication type: ||IT|
|Appears in Collections:||Associated Section of ESAT - INSYS, Integrated Systems|
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