Title: GIDL behavior of p- and n-MuGFET devices with different TiN metal gate thickness and high-k gate dielectrics
Authors: Galeti, M
Rodrigues, M
Martino, J.A
Collaert, Nadine
Simoen, Eddy
Claeys, Cor
Issue Date: 2012
Publisher: Pergamon Press
Series Title: Solid-State Electronics vol:70 issue:1 pages:44-49
ISSN: 0038-1101
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Associated Section of ESAT - INSYS, Integrated Systems

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