Author:

Keywords:

Science & Technology, Technology, Engineering, Electrical & Electronic, Engineering, Nanoscale, negative bias temperature instability (NBTI), pMOSFET, reliability, time-dependent variability, NBTI DEGRADATION, 0906 Electrical and Electronic Engineering, Applied Physics, 4009 Electronics, sensors and digital hardware

Abstract:

The measurement of the entire I D-V G characteristic of a nanoscaled pMOSFET before and after the capture of a single elementary charge in a gate-oxide defect is demonstrated. The impact of a single trapped carrier on the device characteristics is compared with 3-D atomistic device simulations. The I D-V G behavior is identified to depend on the location of the oxide defect with respect to the critical spot of the current percolation path in the channel. © 2012 IEEE.