Title: Impact of back-gate bias and fevice geometry on the total ionizing dose response of 1-transistor floating body RAMs
Authors: Mahatme, N
Zhang, E
Reed, R.A
Bhuva, B.L
Schrimpf, R.D
Fleetwood, D.M
Linten, Dimitri
Simoen, Eddy
Griffoni, Alessio
Aoulaiche, Marc
Jurczak, Malgorzata
Groeseneken, Guido
Issue Date: 2012
Publisher: Professional Technical Group on Nuclear Science
Series Title: IEEE Transactions on Nuclear Science vol:59 issue:6 pages:2966-2973
ISSN: 0018-9499
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Non-KU Leuven Association publications

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