Title: Trades-off between lithography line edge roughness and error-correcting codes requirements for NAND Flash memories
Authors: Poliakov, Pavel ×
Blomme, Pieter
Vaglio Pret, Alessandro
Corbalan, Miguel Miranda
Gronheid, Roel
Verkest, Diederik
Van Houdt, Jan
Dehaene, Wim #
Issue Date: Mar-2012
Publisher: Pergamon-elsevier science ltd
Series Title: Microelectronics Reliability vol:52 issue:3 pages:525-529
Abstract: The only way to keep pace with Moore's Law is to use probabilistic computing for memory design. Probabilistic computing is 'unavoidable', especially when scaled memory dimensions go down to the levels where variability takes over. In order to print features below 20 nm, novel lithographies such as Extreme Ultra Violet (EUV) are required. However, transistor structures and memory arrays are strongly affected by pattern roughness caused by the randomness of such lithography, leading to variability induced data errors in the memory read-out. This paper demonstrates a probabilistic-holistic look at how to handle bit errors of NAND Flash memory and trades-off between lithography processes and error-correcting codes to ensure the data integrity. (C) 2012 Elsevier Ltd. All rights reserved.
ISSN: 0026-2714
Publication status: published
KU Leuven publication type: IT
Appears in Collections:ESAT - MICAS, Microelectronics and Sensors
Associated Section of ESAT - INSYS, Integrated Systems
× corresponding author
# (joint) last author

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