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Title: Strain relaxation in GaN nanopillars
Authors: Tseng, Wei-Jhih ×
Gonzalez, Mario
Dillemans, Leander
Cheng, Kai
Jiang, Sijia
Vereecken, Philippe
Borghs, Gustaaf
Lieten, Ruben #
Issue Date: 2012
Publisher: American Institute of Physics
Series Title: Applied Physics Letters vol:101 issue:25 pages:253102-1-253102-4
Article number: 253102
Abstract: In this work, we demonstrate the direct measurement of the strain state at the surface of nanostructures by in-plane X-ray diffraction. GaN tapered nanopillars have been fabricated by dry etching of a highly strained epilayer. The strain of the surface as function of pillar height shows an exponential relaxation which can be described by a single relaxation parameter. Additionally, we have simulated the strain relaxation and distribution of nanopillars. The impact of the pillar geometry on the strain relaxation has been discussed. In agreement with the measurements, an exponential relaxation of the strain is observed.
ISSN: 0003-6951
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Semiconductor Physics Section
Solid State Physics and Magnetism Section
Centre for Surface Chemistry and Catalysis
Surface and Interface Engineered Materials
× corresponding author
# (joint) last author

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