|ITEM METADATA RECORD
|Title: ||Characterization of electron traps in Si-capped Ge MOSFETs with HfO2/SiO2 gate stack|
|Authors: ||Benbakhti, B|
|Issue Date: ||2012 |
|Publisher: ||Institute of Electrical and Electronics Engineers|
|Series Title: ||IEEE Electron Device Letters vol:33 issue:12 pages:1681-1683|
|Publication status: ||published|
|KU Leuven publication type: ||IT|
|Appears in Collections:||ESAT - MICAS, Microelectronics and Sensors|
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