Title: Characterization of electron traps in Si-capped Ge MOSFETs with HfO2/SiO2 gate stack
Authors: Benbakhti, B
Zhang, J.F
Li, Z
Zhang, W
Mitard, Jerome
Kaczer, Ben
Groeseneken, Guido
Hall, S
Robertson, J
Chalker, P
Issue Date: 2012
Publisher: Institute of Electrical and Electronics Engineers
Series Title: IEEE Electron Device Letters vol:33 issue:12 pages:1681-1683
ISSN: 0741-3106
Publication status: published
KU Leuven publication type: IT
Appears in Collections:ESAT - MICAS, Microelectronics and Sensors

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