Title: Simulation study of performance for a 20 nm gate length In0.53Ga0.47As implant free quantum well MOSFET
Authors: Benbakhti, Brahim
Martinez, Antonio
Kalna, Karol
Hellings, Geert
Eneman, Geert
De Meyer, Kristin
Meuris, Marc
Issue Date: 2012
Publisher: Institute of Electrical and Electronics Engineers
Series Title: IEEE Transactions on Nanotechnology vol:11 issue:4 pages:808-817
ISSN: 1536-125X
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Associated Section of ESAT - INSYS, Integrated Systems

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