|ITEM METADATA RECORD
|Title: ||Simulation study of performance for a 20 nm gate length In0.53Ga0.47As implant free quantum well MOSFET|
|Authors: ||Benbakhti, Brahim|
De Meyer, Kristin
|Issue Date: ||2012 |
|Publisher: ||Institute of Electrical and Electronics Engineers|
|Series Title: ||IEEE Transactions on Nanotechnology vol:11 issue:4 pages:808-817|
|Publication status: ||published|
|KU Leuven publication type: ||IT|
|Appears in Collections:||Associated Section of ESAT - INSYS, Integrated Systems|
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