Download PDF (external access)

Ion Implantation Technology. Proceedings of the 19th International Conference, Date: 2012/01/25 - 2012/01/06, Location: Valladolid Spain

Publication date: 2012-01-01
Volume: 1496 Pages: 206 - 211
ISSN: 9780735411098
Publisher: AIP Publishing

Ion Implantation Technology. Proceedings of the 19th International Conference

Author:

Florakis, Antonios
Vandervorst, Wilfried ; Janssens, Tom ; Rosseel, Erik ; Douhard, Bastien ; Delmotte, Joris ; Cornagliotti, Emanuele ; Baert, Kris ; Posthuma, Niels ; Poortmans, Jef ; Pelaz, L ; Santos, I ; Duffy, R ; Torregrosa, F ; Bourdelle, K

Keywords:

Science & Technology, Technology, Physical Sciences, Engineering, Electrical & Electronic, Physics, Applied, Engineering, Physics, Boron, Ion Implantation, Emitter formation, Solar Cells, PERL cells, IBC cells, TCAD, DISLOCATION LOOPS, EVOLUTION, DEFECTS

Abstract:

The use of ion implantation to form local doping profiles in solar cells has regained interest, as it simplifies the manufacturing process, is litho-free, and high efficiency levels can be obtained [1]. However, residual damage after post annealing can lead to increased saturation current values (J0e), so optimization of the annealing process is required. A full simulation of the anneal treatment and its impact on profile and oxide formation was developed, based on the Synopsys Process TCAD software, for the boron doping case. The validity of the models and parameter set was experimentally verified through SIMS (Secondary Ion Mass Spectroscopy) profiles, sheet resistance and ellipsometry measurements. © 2012 American Institute of Physics.