Title: Gate-length dependent radiation damage in 2-MeV electron-irradiated Si1-xGexS/D p-MOSFETs
Authors: Nakashima, Toshiyuki
Idemoto, Tatsuya
Tsunoda, Isao
Takakura, Kenichiro
Yoneoka, Masashi
Ohyama, Hidenori
Yoshino, Kenji
Simoen, Eddy
Claeys, Cor
Issue Date: 2012
Publisher: Trans Tech Publications
Host Document: Materials Science Forum vol:725 pages:235-238
Conference: International Conference on Defects-Recognition, Imaging and Physics in Semiconductors edition:14th location:Miyazaki, JAPAN date:SEP 25-29, 2011
Description: proceedings paper
ISSN: 0255-5476
Publication status: published
KU Leuven publication type: IC
Appears in Collections:Associated Section of ESAT - INSYS, Integrated Systems

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