|ITEM METADATA RECORD
|Title: ||Gate-length dependent radiation damage in 2-MeV electron-irradiated Si1-xGexS/D p-MOSFETs|
|Authors: ||Nakashima, Toshiyuki|
|Issue Date: ||2012 |
|Publisher: ||Trans Tech Publications|
|Host Document: ||Materials Science Forum vol:725 pages:235-238|
|Conference: ||International Conference on Defects-Recognition, Imaging and Physics in Semiconductors edition:14th location:Miyazaki, JAPAN date:SEP 25-29, 2011|
|Description: ||proceedings paper|
|Publication status: ||published|
|KU Leuven publication type: ||IC|
|Appears in Collections:||Associated Section of ESAT - INSYS, Integrated Systems|
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