Title: Photoluminescence Studies of Polarization Effects in InGaN/(In)GaN Multiple Quantum Well Structures
Authors: Zhang, Liyang
Cheng, Kai
Liang, Hu
Lieten, Ruben
Leys, Maarten
Borghs, Gustaaf #
Issue Date: 29-Feb-2012
Publisher: Publication Board, Japanese Journal of Applied Physics
Series Title: Japanese Journal of Applied Physics 1, Regular Papers, Short Notes & Review Papers vol:51 issue:3 pages:030207-1-030207-3
Article number: 030207
Abstract: The impact of polarization fields in multiple quantum well (MQW) structures is revealed by photoluminescence measurements and band diagram calculations. We observe a blue shift of luminous energy of 33meV and an increased light emission of 19% for InxGa1xN/InyGa1yN MQWs with respect to InxGa1xN/GaN MQWs. Band diagram calculations show a lowering of the polarization fields and an increase in wave function overlap of 22% by adding indium into the barriers. We therefore attribute the observed blue shift and increased emission to an improved electron and hole wave function overlap due to lower electric fields in InxGa1xN/InyGa1yN structures.
ISSN: 0021-4922
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Solid State Physics and Magnetism Section
Supporting Services Campusmanagement Science, Engineering and Technology
# (joint) last author

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