The authors have employed deep level transient spectroscopy to investigate the defects introduced in n-type Ge during 160 keV indium (In) ion implantation. Our results show that In implantation introduces three prominent electron traps with energy levels at E-C-0.09 eV, E-C-0.15 eV, and E-C-0.30 eV, respectively. The authors have found that these defects are different from the point defects introduced by electron irradiation but that they do not involve In. Annealing at 600 degrees C removed all the defects introduced during In implantation but results in a single prominent defect with a level at E-C-0.35 eV. (c) 2006 American Institute of Physics.