Title: Electrical characterization of defects introduced in n-type Ge during indium implantation
Authors: Auret, F. D ×
van Rensburg, P. J. Janse
Hayes, M
Nel, J. M
Meyer, W. E
Decoster, Stefan
Matias, V
Vantomme, André #
Issue Date: Oct-2006
Publisher: Amer inst physics
Series Title: Applied Physics Letters vol:89 issue:15 pages:1-3
Article number: 152123
Abstract: The authors have employed deep level transient spectroscopy to investigate the defects introduced in n-type Ge during 160 keV indium (In) ion implantation. Our results show that In implantation introduces three prominent electron traps with energy levels at E-C-0.09 eV, E-C-0.15 eV, and E-C-0.30 eV, respectively. The authors have found that these defects are different from the point defects introduced by electron irradiation but that they do not involve In. Annealing at 600 degrees C removed all the defects introduced during In implantation but results in a single prominent defect with a level at E-C-0.35 eV. (c) 2006 American Institute of Physics.
ISSN: 0003-6951
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Nuclear and Radiation Physics Section
× corresponding author
# (joint) last author

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