Title: Interface nature of oxidized single-crystal arrays of etched Si nanowires on (100)Si
Authors: Jivanescu, Mihaela
Stesmans, Andre ×
Kurstjens, Rufi
Dross, Frederic
Issue Date: 2012
Publisher: American Institute of Physics
Series Title: Applied Physics Letters vol:100 issue:8 pages:1-4
Article number: 082110
Abstract: Low temperature electron spin resonance studies have been carried out on single crystalline arrays
of sub-10 nm Si nanowires (NWs) manufactured on (100)Si by top down etching and oxidation
thinning. This reveals the presence of a substantial inherent density of Pb0 (Si3:Si) defects
(traps) at the NW Si/SiO2 interfaces, due to particular faceting and enhanced interface strain,
leaving NW interfaces of reduced electrical quality. Perusal of the specific properties of the
occurring Pb-type defect system points to a nanopillar morphology compatible with NWs
predominantly bordered by {110} facets, with cross sectional shape of h100i truncated {110}
squares. The inherent interface quality appears limited by the wire-narrowing thermal oxidation
ISSN: 0003-6951
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Semiconductor Physics Section
× corresponding author

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