Title: Implantation and activation of phosphorus in amorphous and crystalline germanium layers
Authors: Lieten, Ruben R. # ×
Douhard, Benjamin
Stesmans, Andre
Jivanescu, Mihaela
Beeman, Jeffrey W.
Simoen, Eddy #
Vandervorst, Wilfried
Haller, Eugene E.
Locquet, Jean-Pierre #
Issue Date: 18-Jun-2013
Publisher: Electrochemical Society, Inc.
Series Title: ECS Journal of Solid State Science and Technology vol:2 issue:9 pages:P346-P350
Abstract: We have investigated phosphorus implantation and activation in amorphous and crystalline Ge layers, deposited on Si substrates. The structure of the Ge layer has only limited influence on the dopant profile and diffusion after annealing. Surprisingly, crystalline Ge layers show better electrical results after implantation and dopant activation. For the amorphous layer, the solid phase epitaxy process is influenced in the neighborhood of P, leading to point defects, which inhibit electrical activation. This result implies that when a crystalline Ge layer is amorphized during implantation of high doses, the dopant activation can be significantly reduced. Reduced temperature ramping improves activation of P in amorphous Ge layers.
ISSN: 2162-8769
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Solid State Physics and Magnetism Section
Semiconductor Physics Section
Nuclear and Radiation Physics Section
× corresponding author
# (joint) last author

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