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Keywords:

Science & Technology, Technology, Physical Sciences, Engineering, Electrical & Electronic, Nanoscience & Nanotechnology, Optics, Physics, Applied, Engineering, Science & Technology - Other Topics, Physics, ALUMINUM, MICROSTRUCTURE, TEMPERATURE, HISTORY, 0204 Condensed Matter Physics, 0299 Other Physical Sciences, 0906 Electrical and Electronic Engineering, Applied Physics, 4009 Electronics, sensors and digital hardware, 4016 Materials engineering

Abstract:

Substrate curvature measurements were used to study both the stress changes during thermal cycling and the kinetics of tensile stress relaxation in 800 nm Al (0.5wt% Cu)-films on oxidized Si-substrates. Qualitative microstructural evidence is provided for the observed decrease in room-temperature stress after the first and subsequent thermal cycles. Isothermal relaxation measurements at temperatures up to 100°C could be described well by dislocation glide with an activation energy of 3.0±0.3 eV and an average athermal flow stress of 600±200 MPa. Evidence for an Orowan-strengthening mechanism is provided by TEM-investigation.