Title: Defects in Si Foils Fabricated by Spalling at low Temperature: Electrical Activity and Atomic Nature
Authors: Masolin, Alex ×
Simoen, Eddy
Kepa, Jacek
Stesmans, Andre #
Issue Date: 17-Apr-2013
Publisher: Institute of Physics and IOP Publishing
Series Title: Journal of Physics D, Applied Physics vol:46 issue:15 pages:155501-155508
Abstract: Silicon foils are fabricated using a low-temperature (<150 degC) lift-off process. The electrical activity of traps present in these foils is analysed by means of deep-level transient spectroscopy, carried out in parallel with electron spin resonance (ESR) studies to assess the atomic nature of traps. Two hole traps are detected in the as-cleaved samples, one of which is associated with a D-line defect. After vacuum annealing, these traps and the D-line disappear but at the same time, a new hole trap is detected associated with the ESR-revealed P b0 recombination centre. After chemical removal of a thin Si layer from the crack surface, the ESR signal disappears. This shows that samples fabricated with this method are largely dislocation-free and no electronic levels in the bandgap remain if a layer of a few mu m is removed from the crack surface.
ISSN: 0022-3727
Publication status: published
KU Leuven publication type: IT
Appears in Collections:ESAT - ELECTA, Electrical Energy Computer Architectures
Semiconductor Physics Section
× corresponding author
# (joint) last author

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