Title: Tensile strained GeSn on Si by solid phase epitaxy
Authors: Lieten, Ruben ×
Seo, Jin Won
S. Decoster, Stefan
Vantomme, André
Peters, Sven
Bustillo, Karen
Haller, Eugene
Menghini, Mariela Andrea
Locquet, Jean-Pierre #
Issue Date: 5-Feb-2013
Publisher: American Institute of Physics
Series Title: Applied Physics Letters vol:102 issue:5
Article number: 052106
Abstract: We demonstrate single crystalline GeSn with tensile strain on silicon substrates. Amorphous GeSn layers are obtained by limiting the adatom surface mobility during deposition. Subsequent annealing transforms the amorphous layer into single crystalline GeSn by solid phase epitaxy. Excellent structural quality is demonstrated for layers with up to 6.1% of Sn. The GeSn layers show tensile strain (up to þ0.34%), which lowers the difference between direct and indirect band transition and makes this method promising for obtaining direct band gap group IV layers. GeSn with 4.5% Sn shows increased optical absorption compared to Ge and an optical band gap of 0.52 eV.
ISSN: 0003-6951
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Nuclear and Radiation Physics Section
Surface and Interface Engineered Materials
Solid State Physics and Magnetism Section
× corresponding author
# (joint) last author

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