Title: Electrical properties of Low-V-T metal-gated n-MOSFETs using La2O3/SiOx as interfacial layer between HfLaO high-kappa dielectrics and Si channel
Authors: Chang, S. Z ×
Yu, H. Y
Adelmann, C
Delabie, A
Wang, X. P
Van Elshocht, S
Akheyar, A
Nyns, Laura
Swerts, J
Aoulaiche, Marc
Kerner, C
Absil, P
Hoffmann, T. Y
Biesemans, S #
Issue Date: 2008
Publisher: Institute of Electrical and Electronics Engineers
Series Title: IEEE Electron Device Letters vol:29 issue:5 pages:430-433
ISSN: 0741-3106
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Quantum Chemistry and Physical Chemistry Section
× corresponding author
# (joint) last author

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