Title: Implementing TiO2 as gate dielectric for Ge-channel complementary metal-oxide-semiconductor devices by using HfO2/GeO2 interlayer
Authors: Xie, Qi ×
Deduytsche, Davy
Schaekers, Marc
Caymax, Matty
Delabie, Annelies
Qu, Xin-Ping
Detavernier, Christophe #
Issue Date: 2010
Publisher: American Institute of Physics
Series Title: Applied Physics Letters vol:97 issue:11
Article number: 112905
ISSN: 0003-6951
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Quantum Chemistry and Physical Chemistry Section
× corresponding author
# (joint) last author

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