Title: A 4.5 MGy TID-tolerant CMOS bandgap reference circuit using a dynamic base leakage compensation technique
Authors: Cao, Ying ×
De Cock, Wouter
Steyaert, Michiel
Leroux, Paul #
Issue Date: 1-Feb-2013
Publisher: Professional Technical Group on Nuclear Science
Series Title: IEEE Transactions on Nuclear Science vol:60 issue:4 pages:2819-2824
Abstract: The total-ionizing-dose (TID) radiation tolerance of bandgap references in deep-submicron CMOS technology is generally limited by the radiation introduced leakage current in diodes. An analysis of this phenomenon is given in this paper, and a dynamic base leakage compensation (DBLC) technique is proposed to improve the radiation hardness of a bandgap reference built in a standard 0.13 μm CMOS technology. A temperature coefficient of 15 ppm/°C from -40°C to 125°C is measured before irradiation. The voltage variation from 0°C to 100°C is only ±1 mV for an output voltage of 600 mV. Gamma irradiation assessment proves that the bandgap reference is tolerant to a total ionizing dose of at least 4.5 MGy. The output reference voltage exhibits a variation of less than 3% during the entire experiment, when the chip is irradiated by gamma ray at a dose rate of 27 kGy/h.
ISSN: 0018-9499
Publication status: published
KU Leuven publication type: IT
Appears in Collections:ESAT - MICAS, Microelectronics and Sensors
Technologiecluster ESAT Elektrotechnische Engineering
Electrical Engineering (ESAT) TC, Technology Campus Geel
× corresponding author
# (joint) last author

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