Title: A > 4 MGy radiation tolerant 8 THzOhm transimpedance amplifier with 50 dB dynamic range
Authors: Verbeeck, Jens ×
Steyaert, Michiel
Leroux, Paul #
Issue Date: 25-Feb-2013
Publisher: IOP Publishing Ltd
Series Title: Journal of Instrumentation vol:8
Article number: C02052
Abstract: A 130 nm Transimpedance Amplifier has been developed with a 255 MHz bandwidth, 90 dBΩ transimpedance gain and a dynamic input range of 1:325 or 50 dB for a photo-diode capacitance of 0.75 pF. The equivalent integrated input noise is 160 nA @ 25°C. The gain of the voltage amplifier, used in the transimpedance amplifier (TIA), degrades less than 3% over a temperature range from -40 °C up to 125 °C. The TIA and attenuator exhibit a radiation tolerance larger than 4 MGy, as evidenced by radiation assessment.
ISSN: 1748-0221
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Applied Mechanics and Energy Conversion Section
ESAT - MICAS, Microelectronics and Sensors
Technologiecluster ESAT Elektrotechnische Engineering
Electrical Engineering (ESAT) TC, Technology Campus Geel
× corresponding author
# (joint) last author

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