Title: Inas p-n diodes grown on gaas and gaas-coated si by molecular-beam epitaxy
Authors: Dobbelaere, W
Deboeck, J
Heremans, Paul
Mertens, R
Borghs, Gustaaf
Luyten, W
Vanlanduyt, J #
Issue Date: 1992
Publisher: Amer inst physics
Series Title: Applied Physics Letters vol:60 issue:7 pages:868-870
Abstract: InAs p-n diodes have been grown on GaAs and GaAs-coated Si substrates by molecular beam epitaxy. Transmission electron microscopy cross sections of the epilayers demonstrate a good structural quality. Photodiodes were obtained using a Be (p = 5 x 10(16) cm-3) and Si (n = 3 x 10(16) cm-3) doping scheme. The diodes exhibited 77 K zero-bias resistance area products of 2200 OMEGA cm2 for InAs/GaAs and 1500 OMEGA cm2 for InAs/GaAs/Si. The spectral response of the devices peaked at 2.95-mu-m with Johnson noise limited detectivities D* of 7.0 x 10(11) cm Hz1/2/W for InAs/GaAs and 5.8 x 10(11) cm Hz1/2/W for InAs/GaAs/Si. These results clearly demonstrate the feasibility of the monolithic integration of InAs infrared detectors and GaAs or Si read-out electronics.
ISSN: 0003-6951
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Physics and Astronomy - miscellaneous
ESAT - MICAS, Microelectronics and Sensors
# (joint) last author

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