Title: Ni fully GermanoSilicide for gate electrode application in pMOSFETs with HfSiON gate dielectrics
Authors: Yu, HY ×
Singanamalla, R
Simoen, E
Shi, X
Lauwers, A
Kittl, Jorge
Van Elshocht, S
De Meyer, Kristin
Absil, P
Jurczak, M
Biesemans, S #
Issue Date: Jun-2006
Publisher: Institute of Electrical and Electronics Engineers
Series Title: IEEE Transactions on Electron Devices vol:53 issue:6 pages:1398-1404
ISSN: 0018-9383
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Non-KU Leuven Association publications
× corresponding author
# (joint) last author

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