Title: Achieving low-V-T Ni-FUSICMOS via lanthanide incorporation in the gate stack
Authors: Veloso, A ×
Yu, H. Y
Lauwers, A
Chang, S. Z
Adelmann, C
Onsia, B
Demand, M
Brus, S
Vrancken, C
Singanamalla, R
Lehnen, P
Kittl, Jorge
Kauerauf, T
Vos, R
O'Sullivan, B. J
Van Elshocht, S
Mitsuhashi, R
Whittemore, G
Yin, K. M
Niwa, M
Hoffmann, T
Absil, P
Jurczak, M
Biesemans, S #
Issue Date: Sep-2008
Publisher: Pergamon Press
Series Title: Solid-State Electronics vol:52 issue:9 pages:1303-1311
ISSN: 0038-1101
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Non-KU Leuven Association publications
× corresponding author
# (joint) last author

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