Title: Yb-doped NiFUSI for the n-MOSFETs gate electrode application
Authors: Chen, JD ×
Yu, HY
Li, MF
Kwong, DL
van Dal, MJH
Kittl, Jorge
Lauwers, A
Absil, P
Jurczak, M
Biesemans, S #
Issue Date: Mar-2006
Publisher: Institute of Electrical and Electronics Engineers
Series Title: IEEE Electron Device Letters vol:27 issue:3 pages:160-162
ISSN: 0741-3106
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Non-KU Leuven Association publications
× corresponding author
# (joint) last author

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