Title: Inas0.85sb0.15 infrared photodiodes grown on gaas and gaas-coated si by molecular-beam epitaxy
Authors: Dobbelaere, W
Deboeck, J
Heremans, Paul
Mertens, R
Borghs, Gustaaf
Luyten, W
Vanlanduyt, J #
Issue Date: 1992
Publisher: Amer inst physics
Series Title: Applied Physics Letters vol:60 issue:26 pages:3256-3258
Abstract: We report on the first InAs0.85Sb0.15 infrared photodiodes, grown on GaAs and GaAs-coated Si substrates by molecular beam epitaxy. Transmission electron microscopy images reveal a good structural quality. The electrical characteristics of the photodiodes were analyzed using current-voltage, current-temperature, and capacitance-voltage measurements. The spectral response and detector noise were measured at 77 K, resulting in a peak detectivity at 3.8-mu-m of 1.5 X 10(11) cm Hz1/2/W for InAs0.85Sb0.15/GaAs and 5.0 X 10(10) cm Hz1/2/W for InAs0.85Sb0.15/GaAs/Si.
ISSN: 0003-6951
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Physics and Astronomy - miscellaneous
ESAT - MICAS, Microelectronics and Sensors
# (joint) last author

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