Title: Failure analysis of electrical-thermal-optical characteristics of LEDs based on AlGaInP and InGaN/GaN
Authors: Chen, Huanting ×
Keppens, Arno
Hanselaer, Peter
Lu, Yijun
Gao, Yulin
Zhuang, Rongrong
Chen, Zhong #
Issue Date: 1-Oct-2012
Publisher: American Institute of Physics
Series Title: Semiconductors vol:46 issue:10 pages:1310-1315
Article number: DOI: 10.1134/S1063782612100041
Abstract: The electrical-thermal-optical characteristics of AlGaInP yellow and InGaN/GaN blue LEDs under electrical stresses were studied. Since the increase of effective acceptor concentration on p-type side, the forward voltages of AlGaInP decrease after 3155 h aging. And the operating voltage of high forward bias expansion for InGaN/GaN is due to the increase of the series resistance. Compared with InGaN/GaN, AlGaInP LEDs display different trend for the relationship between optical output and ideality factors. The relationship between ideality factor and radiative recombination is also studied and established. The characteristic of different intermediate adhesive is compared during aging period based on transient thermal test.
ISSN: 1063-7826
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Non-KU Leuven Association publications
× corresponding author
# (joint) last author

Files in This Item:
File Description Status SizeFormat
2012_Chen.pdfOA Article Published 516KbAdobe PDFView/Open Request a copy

These files are only available to some KU Leuven Association staff members


All items in Lirias are protected by copyright, with all rights reserved.

© Web of science