Journal of Materials Science vol:48 issue:3 pages:979-988
Single-crystal silicon is extensively used in the
semiconductor industry. Even though most of the steps
during processing involve somehow thermo-mechanical
treatment of silicon, we will focus on two main domains
where these properties play a major role: cleaving techniques
used to obtain a thin silicon layer for photovoltaic
applications and MEMS. The evolution and validation of
these new processes often rely on numerical simulations.
The accuracy of these simulations, however, requires
accurate input data for a wide temperature range. Numerous
studies have been performed, and most of the needed
parameters are generally available in the literature, but
unfortunately, some discrepancies are observed in terms of
measured data regarding fracture mechanics parameters.
The aim of this article is to gather all these data and discuss
the validity of these properties between room temperature
and 1273 K. Particular attention is given to silicon fracture
properties depending on crystallographic orientations, and
to the brittle–ductile temperature transition which can
strongly affect the quality of silicon layers.