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Title: Metal oxide semiconductor device studies of molecular-beam-deposited Al2O3/InP heterostructures with various surface orientations (001), (110), and (111)
Authors: Chu, Lung-Kun ×
Merckling, Clement
Dekoster, Johan
Kwo, Jueinai Raynien
Hong, Minghwei
Caymax, Matty
Heyns, Marc #
Issue Date: Jun-2012
Publisher: Institute of Pure and Applied Physics
Series Title: Applied Physics Express vol:5 issue:6 pages:061202-1-061202-3
Article number: 061202
Abstract: Passivation of InP surface was carried out in situ with molecular-beam-deposited high-kappa Al2O3. InP samples with surface orientations of (001), (110), and (111) were investigated. An atomically smooth Al2O3/InP(001) interface was observed without interfacial layer formation. In-rich surfaces gave better interfacial quality as evidenced by the improved capacitance-voltage characteristics, exhibiting smaller frequency dispersions and minimized inversion response. The energy distributions of interfacial traps (D-it's) were revealed by conductance measurement for the samples with In-rich surfaces. The D-it's are as low as similar to 10(11) cm(-2) eV(-1) near the conduction band edge, while those near the midgap region are similar to 10(13) cm(-2) eV(-1). (C) 2012 The Japan Society of Applied Physics
ISSN: 1882-0778
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Surface and Interface Engineered Materials
× corresponding author
# (joint) last author

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